| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VNS1NV04D | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA 文件：244.38 Kbytes 页数：14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
VNS1NV04D | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA 文件：249.88 Kbytes 页数：14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA 文件：249.88 Kbytes 页数：14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA 文件：252.12 Kbytes 页数：14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in 文件：383.42 Kbytes 页数：24 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po 文件：413.53 Kbytes 页数：24 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po 文件：413.53 Kbytes 页数：24 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
OMNIFET II fully autoprotected Power MOSFET Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po 文件：413.53 Kbytes 页数：24 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in 文件：383.42 Kbytes 页数：24 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
VNS1NV04D | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET | ST 意法半导体 | ST |
技术参数
- Technology：
M0-3
- RDS(on)_typ(mΩ)：
250
- General Description：
OMNIFET II
- Marketing Status：
Active
- Package：
SO-8
- RoHS Compliance Grade：
Ecopack2
- Clamp Voltage_typ(V)：
45
- Drain Current Limit_typ(A)：
2.6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
SOP8 |
12496 |
ST/意法原装正品VNS1NV04D即刻询购立享优惠#长期有货 |
询价 | ||
STMICROELECT |
2021+ |
SOP8 |
9450 |
原装现货。 |
询价 | ||
ST/意法 |
25+ |
SOP-8 |
98900 |
原厂原装正品现货!! |
询价 | ||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ST/意法 |
25+ |
SOP-8 |
20000 |
原装 |
询价 | ||
st |
24+ |
sop-8 |
5000 |
进口原装现货供应 |
询价 | ||
ST |
24+ |
39SOP8 |
32591 |
询价 | |||
STM |
2016+ |
SOP-8 |
3500 |
本公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
ST |
17+ |
SOP8 |
6200 |
100%原装正品现货 |
询价 | ||
ST |
23+ |
3.9/SOP8 |
5000 |
原装正品,假一罚十 |
询价 |
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