OMNIFET II：全自动保护功率MOSFET

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdow • In compliance with the 2002/95/EC european directive \n• Compatible with standard power mosfet \n• ESD protection \n• Diagnostic feedback through input pin \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the ;

ST

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体