OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

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STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po

文件：413.53 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard po

文件：413.53 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II：全自动保护功率MOSFET

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdow • In compliance with the 2002/95/EC european directive \n• Compatible with standard power mosfet \n• ESD protection \n• Diagnostic feedback through input pin \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the ;

ST

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICS

意法半导体