N-Channel MOSFET

WFF23N50DP 是一款N-沟道高压功率MOSFT，具有开关速度快，dv/dt 能力提升等优点，可应用于LED电源，充电器，适配器，开关电源等应用。 • 500V, 23A\n• RDS(ON) = 0.26Ω (Max.) @ VGS = 10V, ID = 11.5A\n• 100%雪崩测试\n• dv/dt 能力提升\n• 开关速度快;

Winsemi

稳先微电子

Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A)

Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications • Lower Gate charge results in simpler drive requirements • Enhanced dV/dt capabilities offer improved ruggedness • Higher Gate voltage threshold offers improved noise immunity Application

文件：104.21 Kbytes 页数：8 Pages

IRF

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

文件：159.51 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Availab

文件：159.51 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司