Silicon N-Channel MOSFET

文件：750.3 Kbytes 页数：8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

GeneralDescription\nThis Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.This latest technology has been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V\nUltra-low Gate Charge (Typical 9.0nC)\nFast Switching Capability\n100% Avalanche Tested\nIsolation Voltage(VISO=4000VAC)\nMaximum Junction Temperature Range(150℃)\nHalogenfree(WFF2N65-HF);

Winsemi

稳先微电子

Silicon N-Channel MOSFET

文件：506.61 Kbytes 页数：7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

文件：297.72 Kbytes 页数：8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

场效应管

Winsemi

稳先微电子

N-Channel MOSFET

Winsemi

稳先微电子