Silicon N-Channel MOSFET

General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficien

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WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

N-Channel MOSFET

Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.) □ BVDSS=600V,ID=2A □ RDS(on): 5 Ω(Max) @VG=10V □ 100 Avalanche Tested

文件：714.75 Kbytes 页数：7 Pages

WISDOM

600V N-Channel MOSFET

文件：1.55693 Mbytes 页数：6 Pages

WISDOM

600V N-Channel MOSFET

□ Low Intrinsic Capacitances\n□ Excellent Switching Characteristics\n□ Extended Safe Operating Area\n□ Unrivalled Gate Charge :Qg= 8.5nC (Typ.)\n□ BVDSS=600V,ID=2A\n□ RDS(on): 5 Ω(Max) @VG=10V  \n□ 100% Avalanche Tested;

Wisdom

Silicon N-Channel MOSFET

General Description\nThis Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency s ■2A,60 0V, RDS(on)(Max 5Ω)@VGS=10V\n■ Ultra-low Gate Charge(Typical 9.0nC)\n■ Fast Switching Capability\n■ 100%Avalanche Tested\n■ Isolation Voltage ( VISO = 4000V AC )\n■ Maximum Junction Temperature Range(150℃);

Winsemi

稳先微电子

600V N-Channel MOSFET

文件：1.55693 Mbytes 页数：6 Pages

WISDOM

Silicon N-Channel MOSFET

文件：583.59 Kbytes 页数：7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

文件：256.93 Kbytes 页数：8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

文件：256.93 Kbytes 页数：8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

超结MOSFET

Winsemi

稳先微电子