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VNS1NV04D-E

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D-E

包装:卷带(TR)剪切带(CT) 封装/外壳:8-SOIC(0.154",3.90mm 宽) 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04PTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04TR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04DP-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower™M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    VNS1NV04D-E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 配电开关,负载驱动器

  • 系列:

    OMNIFET II™, VIPower™

  • 包装:

    卷带(TR)剪切带(CT)

  • 开关类型:

    通用

  • 输出数:

    2

  • 比率 - 输入:

    1:1

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    36V(最大)

  • 电压 - 供电 (Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    1.7A

  • 导通电阻(典型值):

    250 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    8-SOIC

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 描述:

    IC PWR DRIVER N-CHANNEL 1

供应商型号品牌批号封装库存备注价格
ST
19+
SOP8
4200
只做原装现货
询价
STMicroelectronics
23+
8-SOIC
7750
全新原装优势
询价
2020+
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
询价
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
STMicroelectronics
23+
8-SO
66800
原装正品现货
询价
ST/意法
21+
65200
询价
ST
20+
SOP8
25000
全新原装现货,假一赔十
询价
STM
20+
SOP-8
1001
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多VNS1NV04D-E供应商 更新时间2024-5-1 8:01:00