?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp

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STMICROELECTRONICS

意法半导体

FULLY AUTOPROTECTED POWER MOSFET

文件：399.78 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

文件：511.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

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OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

• ESD PROTECTION\n• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN\n• COMPATIBLE WITH STANDARD POWER MOSFET\n• LINEAR CURRENT LIMITATION\n• SHORT CIRCUIT PROTECTION• THERMAL SHUT DOWN\n• LOW CURRENT DRAWN FROM INPUT PIN\n• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)\n• INTEGRATED CLAMP;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体