?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the

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STMICROELECTRONICS

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FULLY AUTOPROTECTED POWER MOSFET

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STMICROELECTRONICS

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

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OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

• ESD PROTECTION\n• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN\n• COMPATIBLE WITH STANDARD POWER MOSFET\n• LINEAR CURRENT LIMITATION\n• SHORT CIRCUIT PROTECTION• THERMAL SHUT DOWN\n• LOW CURRENT DRAWN FROM INPUT PIN\n• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)\n• INTEGRATED CLAMP;

ST

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Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半导体