首页 >VNN1NV04TRE>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

VND1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VND1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04PTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNN1NV04TR

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVND1NV04,VNN1NV04,VNS1NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications. Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04D-E

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNS1NV04DisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPowerM0-3Technology:theyareintendedforreplacementofstandardPowerMOSFETSfromDCupto50KHzapplications. ■LINEA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04DP-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower™M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04DPTR-E

OMNIFETIIfullyautoprotectedPowerMOSFET

Description TheVNS1NV04DP-EisadeviceformedbytwomonolithicOMNIFETIIchipshousedinastandardSO-8package.TheOMNIFETIIaredesignedinSTMicroelectronicsVIPower™M0-3technology:theyareintendedforreplacementofstandardPowerMOSFETsfromDCupto50KHzapplications.Builtin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNS1NV04P-E

OMNIFETIIfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST(意法)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
ST
22+
SOT223
9000
原厂渠道,现货配单
询价
ST
2017+
SOT223
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
STM
2022
SOT223
6800
原厂原装正品,价格超越代理
询价
ST
22+23+
SOT223
73539
绝对原装正品现货,全新深圳原装进口现货
询价
ST
1845+
SOT223
5790
只做原装!量大可以订货!特价支持实单!
询价
ST
1822+
SOT-223
9852
只做原装正品假一赔十为客户做到零风险!!
询价
STM
2018+
26976
代理原装现货/特价热卖!
询价
23+
N/A
35700
正品授权货源可靠
询价
ST
2017+
SOT-223
30000
原装正品,诚信经营
询价
更多VNN1NV04TRE供应商 更新时间2024-5-24 16:28:00