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VNN1NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

文件:392.63 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

文件:405.89 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04

OMNIFET II fully autoprotected Power MOSFET

文件:538.37 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04

fully autoprotected Power MOSFET

文件:406.97 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

ST

意法半导体

VNN1NV0413TR

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

文件:392.63 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

VNN1NV0413TR

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

文件:405.89 Kbytes 页数:33 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04P-E

OMNIFET II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件:465.35 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04P-E_V01

OMNIFET II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件:465.35 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

VNN1NV04PTR-E

OMNIFET II fully autoprotected Power MOSFET

Features • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Po

文件:465.35 Kbytes 页数:28 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Technology:

    M0-3

  • RDS(on)_typ(mΩ):

    250

  • General Description:

    OMNIFET II fully autoprotected Power MOSFET

  • Marketing Status:

    Active

  • Package:

    SOT-223

  • RoHS Compliance Grade:

    Ecopack2

  • Clamp Voltage_typ(V):

    45

  • Drain Current Limit_typ(A):

    2.6

供应商型号品牌批号封装库存备注价格
ST/意法
25+
SOT-223
32360
ST/意法全新特价VNN1NV04即刻询购立享优惠#长期有货
询价
STM
SOT223
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
ST
25+
255
全新原装!优势库存热卖中!
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST
24+
SOT223
1500
询价
ST
25+
SOT-223
110
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
17+
SOT-223
6200
100%原装正品现货
询价
ST
23+
QFP-80
5000
原装正品,假一罚十
询价
ST
24+
SOT-223
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
2003+
TO223-4
18482
原装现货海量库存欢迎咨询
询价
更多VNN1NV04供应商 更新时间2026-2-4 15:26:00