OMNIFET II fully autoprotected Power MOSFET

文件：416.49 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件：416.49 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件：546.08 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II全自动保护功率MOSFET

The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.\n\n Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh e • ESD protection \n• Diagnostic feedback through input pin \n• Compatible with standard Power MOSFET \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Integrated ;

ST

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MOS(场效应管)

ST

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Package：TO-261-4，TO-261AA；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体

Package：TO-261-4，TO-261AA；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR MOSFET N-CHAN 1:1 SOT223

STMICROELECTRONICS

意法半导体