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VNN1NV04P-E数据手册ST中文资料规格书
VNN1NV04P-E规格书详情
描述 Description
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
特性 Features
• ESD protection
• Diagnostic feedback through input pin
• Compatible with standard Power MOSFET
• Linear current limitation
• Short circuit protection
• Thermal shutdown
• Low current drawn from input pin
• Direct access to the gate of the Power MOSFET (analog driving)
• Integrated clamp
技术参数
- 制造商编号
：VNN1NV04P-E
- 生产厂家
：ST
- Technology
：M0-3
- RDS(on)_typ(mΩ)
：250
- General Description
：OMNIFET II fully autoprotected Power MOSFET
- Marketing Status
：Active
- Package
：SOT-223
- RoHS Compliance Grade
：Ecopack2
- Clamp Voltage_typ(V)
：45
- Drain Current Limit_typ(A)
：2.6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
STM |
24+/25+ |
SOT-223 |
11000 |
原装正品现货库存价优 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法 |
21+ |
SOT-223-3 |
2180 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
STMicr |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
ST/意法 |
2450+ |
SOT223 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
ST |
23+ |
NA |
12500 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
ST/意法半导体 |
21+ |
SOT-223 |
10000 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
21+ |
SOT223 |
5000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST/意法半导体 |
24+ |
SOT-223 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
