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VNLD5160-E数据手册ST中文资料规格书
VNLD5160-E规格书详情
描述 Description
The VNLD5160-E is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off.
特性 Features
• AEC-Q100 qualified
• Drain current: 3.5 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Specially intended for R10W or 2xR5W automotive signal lamps
技术参数
- 制造商编号
:VNLD5160-E
- 生产厂家
:ST
- Technology
:M0-5
- RDS(on)_typ(mΩ)
:160
- General Description
:OMNIFET III: fully protected low-side driver
- Marketing Status
:Active
- Package
:SO-8
- RoHS Compliance Grade
:Ecopack2
- Clamp Voltage_typ(V)
:46
- Drain Current Limit_typ(A)
:5
- Digital status
:true
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
22+ |
SOP8 |
9000 |
只做原装假一罚十 |
询价 | ||
ST/意法 |
24+ |
SOP8 |
30000 |
原装现货 假一赔十 |
询价 | ||
ST(意法半导体) |
2021+ |
SO-8 |
499 |
询价 | |||
ST/意法 |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法 |
22+ |
SOP8 |
8000 |
原装正品,支持实单! |
询价 | ||
STMicr |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
ST/意法半导体 |
25 |
SO-8 |
6000 |
原装正品 |
询价 | ||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
1825 |
SOP-8 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |