MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d

文件：373.78 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d

文件：373.78 Kbytes 页数：9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d

文件：373.78 Kbytes 页数：9 Pages

RENESAS

瑞萨

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • S

文件：48.51 Kbytes 页数：6 Pages

SANYO

三洋

Ultra low dropout, 800mA, CMOS LDO

文件：768.8 Kbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

Ultra low dropout, 500mA, CMOS LDO

文件：879.51 Kbytes 页数：10 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司