UPA1700G

MOSFIELDEFFECTPOWERTRANSISTOR

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistor designedforDC/DCconverterandpowermanagement applicationsofnotebookcomputers. FEATURES •LowOn-Resistance RDS(on)1=27mWTyp.(VGS=10V,ID=3.5A) RDS(on)2=50mWTyp.(VGS=4V,ID=3.5A) •LowCissCiss

VLF-1700

LowPassFilterDCto1700MHz

Features •lowcost •smallsize •7sections •temperaturestable •patentpending Applications •harmonicrejection •transmitters/receivers •labuse

VS-SD1700CK

StandardRecoveryDiodes,(HockeyPUK),2100A

FEATURES •Widecurrentrange •Highvoltageratingsupto4500V •Highsurgecurrentcapabilities •Diffusedjunction •HockeyPUKversion •CasestyleK-PUK(DO-200AC) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS •

VS-SD1700CK

Highvoltageratingsupto4500V

WCM1700

AC/DCSensingCurrentModulewithDigitalDataoutput

Feature OperatingvoltageDC5.0V Diameter9.0mmconductorthroughhole Sensingcurrentrange: AC:0~35 A(50Hz,60Hz) DC :50A Highaccuracy AC:(0~10A) 0.1A (10~35 A)1 DC:±±(0~0.2A ±±(10~50A)2 Highresolution: AC/DC:37mA UARTdigitaldataoutputB

WCS1700

HallEffectBaseLinearCurrentSensor

WCS1700

HallEffectBaseLinearCurrentSensor

XIT1700

P-ChannelEnhancementModeMOSFETGeneralPurposeAmplifier

FEATURES •LowON-Resistance •HighGain •LowNoiseVoltage •HighInputImpedance •LowLeakage