TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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Portable Equipment Applications Motor Drive Applications DC_DC Converters

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)

Portable Equipment Applications Motor Drive Applications DC-DC Converters • Lead(Pb)-Free • Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) • Enhancement model: Vth = 0.7 to

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