TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to

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Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：275.91 Kbytes 页数：7 Pages

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Dual N-Channel 30 V (D-S) MOSFET

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

文件：275.91 Kbytes 页数：7 Pages

TOSHIBA

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