Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)

Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications • Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.) N Channel RDS (ON) = 20 mΩ (typ.) • High forward transfer admittanc

文件：275.38 Kbytes 页数：11 Pages

TOSHIBA

东芝

Power MOSFET (N-ch + P-ch complementary

Application Scope：Mobile equipments / Notebook PCs / Motor drivers\nPolarity：N-ch + P-ch\nGeneration：U-MOSⅢ/U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID 6 A \nDrain-Source voltage (Q1) VDSS 30 V \nDrain current (Q2) ID -4.5 A \nDrain-Source voltage (Q2) VDSS -30 V \nPower Dissipation PD 1.5 W ;

Toshiba

东芝

Cell Phones Motor Drivers

文件：353.02 Kbytes 页数：14 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Single P-Channel 1.8V Specified MicroSURF?

文件：393.29 Kbytes 页数：12 Pages

TSC

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