TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) • High forward transfer admittance : |Yfs| = 8 S (typ.) • Low leakage current : IDSS = 10 µA (max) (VDS = 3

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

64K DYNAMIC RAM CONTROLLER

文件：847.88 Kbytes 页数：16 Pages

Intel

英特尔

MSD Blaster Coil

文件：301.39 Kbytes 页数：2 Pages

MALLORY

pH- and ORP-probes

A probe Type 8203 is inserted into a Bürkert pH or ORP meter, which is a modular device designed for the measurement of: • the pH in clean liquids or liquids containing solids, sulphides or proteins. • the oxidation-reduction potential in clean liquids or liquids containing solids, sulphides o

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BURKERT

宝帝流体控制系统