TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.3 S (typ.) • Low leakage current: IDSS = 10 µA (ma

文件：226.24 Kbytes 页数：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：253.27 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Toshiba

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：253.27 Kbytes 页数：7 Pages

TOSHIBA

东芝