Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13.6 mΩ (typ.) • High forward

文件：213.89 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

Toshiba

东芝

POWER ZENERS

DESCRIPTION One watt zener diodes, hermetically sealed in glass. FEATURES • High Surge Ratings • A Quarter the Size of Conventional 1Watt Zeners • Impervious to Moisture

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Microsemi

美高森美

POWER ZENERS

UZ8706, UZ8806 SERIES Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件：207.7 Kbytes 页数：2 Pages

DIGITRON

POWER ZENERS

DESCRIPTION One watt zener diodes, hermetically sealed in glass. FEATURES • High Surge Ratings • A Quarter the Size of Conventional 1Watt Zeners • Impervious to Moisture

文件：101.87 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司