TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) • High forward transfer admittance : |Yfs| = 7 S (typ.) • Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) • Enhancement−mode : Vth = −0.8~ −2.0 V (

文件：520.36 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

Toshiba

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

文件：230.53 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement-model: Vth = −0.45 to −1.2 V

文件：118.98 Kbytes 页数：4 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：228.08 Kbytes 页数：7 Pages

TOSHIBA

东芝