TPC8303

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •Lowdrain−sourceONresistance:RDS(ON)=27mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=7S(typ.) •Lowleakagecurrent:IDSS=−10µA(max)(VDS=−30V) •Enhancement−mode:Vth=−0.8~−2.0V(

TPCF8303

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV)

TPCF8303

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIV)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=43mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−20V) •Enhancement-model:Vth=−0.45to−1.2V

TPCP8303

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TPCP8303

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCS8303

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableMachinesandTools

TPCS8303

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableMachinesandTools

TPCS8303

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableMachinesandTools •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=15mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=18S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(