TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance : |Yfs| = 18 S (typ.) • Low leakage current : IDSS = 10 µA (max) (VDS =

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TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Toshiba

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.) • Low leakage current: IDSS = 10 µA (max

文件：304 Kbytes 页数：7 Pages

TOSHIBA

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Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

文件：200.13 Kbytes 页数：7 Pages

TOSHIBA

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