TP65H480G4JSG中文资料650V 480mΩ SuperGaN® FET in PQFN56数据手册Transphorm规格书

描述 Description

The TP65H480G4JSG 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H480G4LSG is offered in an industry-standard PQFN56 with a common source package configuration.