TP65H050G4BS中文资料650V 50mΩ SuperGaN® FET in TO-263 (D2-PAK)数据手册Transphorm规格书

描述 Description

The TP65H050G4BS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.

Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050G4BS is offered in an industry-standard SMD TO-263 with a common source package configuration.