TP65H035WS数据手册Transphorm中文资料规格书

描述 Description

The TP65H035WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r
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Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.\r
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The TP65H035WS is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

特性 Features

• 易于驱动 – 与标准栅极驱动器兼容
• 低传导、低开关损耗
• 低 Qrr (170nC) – 无需任何续流二极管
• GSD 引脚布局可提升高速设计
• 通过 JEDEC 认证的 氮化镓GaN技术
• 符合限制有害物质指令 (RoHS) 规范要求且不含卤素
• 实现更高效的拓扑 – 易于实施无桥图腾柱设计
• 快速切换，提高效率
• 提高功率密度
• 系统尺寸减小、重量减轻
• BOM 成本更低

应用 Application

• Datacom\r
• Broad industrial\r
• PV inverter\r
• Servo motor