TP65H035WS

采用 TO-247 封装的 650V 35mΩ 氮化镓GaN FET; • 易于驱动 – 与标准栅极驱动器兼容\n• 低传导、低开关损耗\n• 低 Qrr (170nC) – 无需任何续流二极管\n• GSD 引脚布局可提升高速设计\n• 通过 JEDEC 认证的 氮化镓GaN技术\n• 符合限制有害物质指令 (RoHS) 规范要求且不含卤素\n• 实现更高效的拓扑 – 易于实施无桥图腾柱设计\n• 快速切换，提高效率\n• 提高功率密度\n• 系统尺寸减小、重量减轻\n• BOM 成本更低\n;

The TP65H035WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.\r\n\r\n The TP65H035WS is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

TP65H035WS

650V Cascode GaN FET in TO-247

TP65H035WSQA

650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247;

The TP65H035WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\n\nThe device is also automotive qualified to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.\n\nTransphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.\n\nThe TP65H035WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.\n\n

TP65H035WSQA

AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab)

TP805

WYC
DIP-4

WYC