首页>TP65H035G4WSQA>规格书详情

TP65H035G4WSQA中文资料650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247数据手册Transphorm规格书

PDF无图
厂商型号

TP65H035G4WSQA

功能描述

650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247

制造商

Transphorm Transphorm Inc

数据手册

下载地址下载地址二

更新时间

2025-9-23 16:38:00

人工找货

TP65H035G4WSQA价格和库存,欢迎联系客服免费人工找货

TP65H035G4WSQA规格书详情

描述 Description

The TP65H035WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

The device is also automotive qualified to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H035WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

技术参数

  • 制造商编号

    :TP65H035G4WSQA

  • 生产厂家

    :Transphorm

  • Rds(on)eff (mΩ) typ

    :35

  • Rds(on)eff (mΩ) max

    :41

  • Id (25°C) (A) max

    :46.5

  • Package

    :TO-247

  • Package Variation

    :Source

供应商 型号 品牌 批号 封装 库存 备注 价格
HARRIS
25+
SOP
4500
全新原装、诚信经营、公司现货销售!
询价
HARRIS
1998
SOP
472
原装现货海量库存欢迎咨询
询价
TPPRO
25+
QFP
18000
原厂直接发货进口原装
询价
HARRIS
24+
SOP
2500
自己现货
询价
TPPRO
23+
QFP
5000
原装正品,假一罚十
询价
Transphorm
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
2023+
3000
进口原装现货
询价
2023+
5800
进口原装,现货热卖
询价
NS
24+
DIP-16
37500
原装正品现货,价格有优势!
询价
TRANSPHORM
19+
TO247
1100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价