650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H035G4WSQS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

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650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247

The TP65H035WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\n\nThe device is also automotive qual

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650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.21511 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® FET in TOLL (source tab)

Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.21511 Mbytes 页数：13 Pages

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TP65H035G4WS

文件：1.35293 Mbytes 页数：13 Pages

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