650V SuperGaN® FET in TOLL (source tab)

Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.21511 Mbytes 页数：13 Pages

TRANSPHORM

TP65H035G4WS

文件：1.35293 Mbytes 页数：13 Pages

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650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H035G4WSQS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

文件：726.14 Kbytes 页数：13 Pages

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650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

文件：1.26318 Mbytes 页数：12 Pages

TRANSPHORM