TP65H015G5WS中文资料650V 15mΩ SuperGaN® FET in TO-247, ‘The Lowest Ron Packaged GaN FET in the Market’数据手册Transphorm规格书

描述 Description

The TP65H015G5WS 650V 15mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.

Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H015G5WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.