650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform use

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TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform use

文件：1.06464 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaNTM GaN FET in PQFN (source tab)

文件：1.29543 Mbytes 页数：13 Pages

TRANSPHORM

650V 480mΩ SuperGaN® FET in PQFN56

The TP65H480G4JSG 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\n\nTransphorm GaN offers improved ef

Transphorm