TP65H300G4LSG中文资料650V 150mΩ GaN FET in PQFN88数据手册Transphorm规格书

描述 Description

The TP65H300G4LSG 650V 240mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TP65H300G4LSG is offered in an industry-standard 8×8 PQFN with a common source package configuration.