丝印：K125A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：488.95 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\n\nPolarity：N-ch\n\nGeneration：DTMOSⅥ\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB125SP is a high voltage power integrated circuit made using SGS-THOMSON Microelectronics Vertical Intelligent Power Technology, with vertical current flow power darlington and logic level compatible driving circuit. ■ PRIMARY COIL VOLTAGE INTERNALLY SET ■ COIL CURRENT

文件：78.4 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB125SP is a high voltage power integrated circuit made using SGS-THOMSON Microelectronics Vertical Intelligent Power Technology, with vertical current flow power darlington and logic level compatible driving circuit. ■ PRIMARY COIL VOLTAGE INTERNALLY SET ■ COIL CURRENT

文件：78.4 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SOT23 MICROPOWER 1.22V VOLTAGE REFERENCE

DESCRIPTION The ZXRE125 is a bandgap circuit designed to achieve a precision micropower voltage reference of 1.22 volts. The device is available in the small outline SOT23 surface mount package which is ideal for applications where space saving is important. SOT23 tolerance is available to 0.5 f

文件：140.57 Kbytes 页数：4 Pages

ZETEX