Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：180.05 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.3 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.03494 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

Toshiba

东芝