Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：187.12 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：287.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.58205 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅡ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 12 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝