Thermal performance for 45 W CPU

文件：5.6373 Mbytes 页数：78 Pages

delta

台达电子

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ･HIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ･LOW INTERMODULATION DISTORTION IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：270.28 Kbytes 页数：6 Pages

TOSHIBA

东芝

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

文件：188.47 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm ■ HIGH POWER P1dB=40.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：180.25 Kbytes 页数：4 Pages

TOSHIBA

东芝

P1dB=42.0dBm at 10.7GHz to 11.7GHz

FEATURES • BROAD BAND INTERNALLY MATCHED FET • HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz • HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz • ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level • HERMETICALLY SEALED PACKAGE

文件：482.86 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：144.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：194.82 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：281.16 Kbytes 页数：2 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：137.81 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under

文件：178.4 Kbytes 页数：4 Pages

TOSHIBA

东芝