TIM数据手册库存现货台达delta-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
TIM	文件：5.6373 Mbytes Page：78 Pages	Thermal performance for 45 W CPU	deltaDelta Electronics, Inc. 台达台达电子集团	delta
TIM0910-30L	文件：270.28 Kbytes Page：6 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=45.0dBmat9.5GHzto10.5GHz ･HIGHGAIN G1dB=7.0dBat10.5GHzto10.5GHz ･LOWINTERMODULATIONDISTORTION IM3=-25dBc(Min.)atPout=38dBm(SingleCarrierLevel) ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1000NSM33-TS000	文件：188.47 Kbytes Page：9 Pages	SCALE-2 Plug-and-Play Drivers Features Plug-and-playsolution AllowsparallelconnectionofIGBTmodules For2-level,3-levelandmultileveltopologies Built-inisolatedDC/DCpowersupply(master) Fiber-opticlinks(master) Built-ininterfaceto1SP0635D2S1(C)(slave) Dutycycle0...100 DynamicAdvance	POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司	POWERINT
TIM1011-10L	文件：180.25 Kbytes Page：4 Pages	MICROWAVE POWER GaAs FET FEATURES ■LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=29.0dBm ■HIGHPOWER P1dB=40.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=6.0dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-15L	文件：482.86 Kbytes Page：4 Pages	P1dB=42.0dBm at 10.7GHz to 11.7GHz FEATURES •BROADBANDINTERNALLYMATCHEDFET •HIGHPOWER P1dB=42.0dBmat10.7GHzto11.7GHz •HIGHGAIN G1dB=7.0dBat10.7GHzto11.7GHz •･LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=30.0dBm SingleCarrierLevel •HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-2L	文件：144.5 Kbytes Page：5 Pages	MICROWAVE POWER GaAs FET FEATURES ■HIGHPOWER P1dB=33.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-4L	文件：194.82 Kbytes Page：4 Pages	MICROWAVE POWER GaAs FET FEATURES ■HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-4UL	文件：281.16 Kbytes Page：2 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ･HIGHGAIN G1dB=9.5dBat10.7GHzto11.7GHz ･LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=24.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-5L	文件：137.81 Kbytes Page：5 Pages	MICROWAVE POWER GaAs FET FEATURES ■HIGHPOWER P1dB=37.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.0dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHED ■HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-8L	文件：178.4 Kbytes Page：4 Pages	MICROWAVE POWER GaAs FET Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1011-8UL	文件：281.57 Kbytes Page：2 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.5dBmat10.7GHzto11.7GHz ･HIGHGAIN G1dB=9.0dBat10.7GHzto11.7GHz ･LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1200ESM33	文件：188.36 Kbytes Page：9 Pages	SCALE-2 Plug-and-Play Drivers Features Plug-and-playsolution AllowsparallelconnectionofIGBTmodules For2-level,3-levelandmultileveltopologies Built-inisolatedDC/DCpowersupply(master) Fiber-opticlinks(master) Built-ininterfaceto1SP0635D2S1(C)(slave) Dutycycle0...100 DynamicAdvance	POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司	POWERINT
TIM1213-18L	文件：318.65 Kbytes Page：7 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=42.5dBmat12.7GHzto13.2GHz ･HIGHGAIN G1dB=6.0dBat12.7GHzto13.2GHz ･LOWINTERMODULATIONDISTORTION IM3(MIN.)=-25dBcatPout=36.0dBm(SingleCarrierLevel) ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1213-2L	文件：281.02 Kbytes Page：2 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=33.5dBmat12.7GHzto13.2GHz ･HIGHGAIN G1dB=7.5dBat12.7GHzto13.2GHz ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1213-30L	文件：348.36 Kbytes Page：8 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=45.0dBmat12.7GHzto13.2GHz ･HIGHGAIN G1dB=5.5dBat12.7GHzto13.2GHz ･LOWINTERMODULATIONDISTORTION IM3=-28dBcatPout=33dBm(SingleCarrierLevel) ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1213-8UL	文件：473.32 Kbytes Page：6 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.0dBmat12.7GHzto13.2GHz ･HIGHGAIN G1dB=8.0dBat12.7GHzto13.2GHz ･LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1314-15UL	文件：325.87 Kbytes Page：8 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=42.0dBmat13.75GHzto14.5GHz ･HIGHGAIN G1dB=7.0dBat13.75GHzto14.5GHz ･LOWINTERMODULATIONDISTORTION IM3=-42dBc(Min.)atPout=30dBm(SingleCarrierLevel) ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1314-8UL	文件：481.96 Kbytes Page：6 Pages	MICROWAVE POWER GaAs FET FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.0dBmat13.75GHzto14.5GHz ･HIGHGAIN G1dB=7.0dBat13.75GHzto14.5GHz ･LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1414-10LA	文件：180.06 Kbytes Page：4 Pages	MICROWAVE POWER GaAs FET FEATURES ■LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=29.0dBm ■HIGHPOWERP1dB=40.5dBmat14.0GHzto14.5GHz ■HIGHGAING1dB=6.0dBat14.0GHzto14.5GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
TIM1414-10LA-252	文件：187.16 Kbytes Page：4 Pages	HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz FEATURES HIGHPOWER P1dB=39.5dBmat13.75GHzto14.5GHz HIGHGAIN G1dB=5.5dBat13.75GHzto14.5GHz BROADBANDINTERNALLYMATCHEDFET HERMETICALLYSEALEDPACKAGE	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA

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详细参数

型号：
TIM
制造商：
Toshiba America Electronic Components
功能描述：
TRANSISTOR, GAAS FET INTERNALLY MATCHED, 10GHZ,60W - Trays

供应商	型号	品牌	批号	封装	库存	备注	价格
天津市博通航睿技术有限公司	TIM3.5-4823SM	TRACO	24+		2500	优势货源原装正品	询价
深圳市芯连胜科技有限公司	TIM8596-8	TOSHIBA	20+	211C1B	121	原装正品现货	询价
深圳市明嘉莱科技有限公司	TIM1414-8L	TOSHIBA/东芝	24+	SMD	880000	明嘉莱只做原装正品现货	询价
深圳市威雅利发展有限公司	TIM6472-16UL	TOSHIBA	11+	高频管	1	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳廊盛科技有限公司	TIM9904ANL	TI/德州仪器	23+	DIP	20000	原装正品欢迎咨询	询价
深圳市宏捷佳电子科技有限公司	TIM9904ALN	TI	20+	DIP18	12300	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市益百分电子有限公司	TIMC34119DTK	MOT		SOP	1335	全新原装进口自己库存优势	询价
深圳市创盛芯科技有限公司	TIM1414-8-252	TOSHIBA/东芝	22+		780	原装现货假一赔十	询价
深圳市芯福林电子科技有限公司	TIM9904AJDL	TI	21+	CDIP20	13880	公司只售原装,支持实单	询价
深圳市湘达电子有限公司	TIM5867-15UL	TOSHIBA/东芝	20+	NA	1000	全新原装现货,一片也是批量价。	询价

更多TIM供应商更新时间2024-6-23 15:00:00

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