MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：281.57 Kbytes 页数：2 Pages

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SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

文件：188.36 Kbytes 页数：9 Pages

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.) = -25dBc at Pout= 36.0dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：318.65 Kbytes 页数：7 Pages

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东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 7.5dB at 12.7GHz to 13.2GHz ･HERMETICALLY SEALED PACKAGE

文件：281.02 Kbytes 页数：2 Pages

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东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 5.5dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：348.36 Kbytes 页数：8 Pages

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东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：473.32 Kbytes 页数：6 Pages

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东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：325.87 Kbytes 页数：8 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：481.96 Kbytes 页数：6 Pages

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东芝

MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm ■ HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：180.06 Kbytes 页数：4 Pages

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东芝

HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz

FEATURES HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE

文件：187.16 Kbytes 页数：4 Pages

TOSHIBA

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