TIM1314-8UL

MICROWAVE POWER GaAs FET

FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.0dBmat13.75GHzto14.5GHz ･HIGHGAIN G1dB=7.0dBat13.75GHzto14.5GHz ･LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE

EIA1314-8P

13.75-14.5GHz,8WInternallyMatchedPowerFET

13.75-14.5GHz,8WInternallyMatchedPowerFET •13.75-14.5GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •HIGHPAE(25TYPICAL) •+39dBmTYPICALP1dBOUTPUTPOWER •7.0dBTYPICALG1dBPOWERGAIN •NON-HERMETICMETALFLANGEPACKAGE

EIC1314-8

13.75-14.5GHz8-WattInternallyMatchedPowerFET

FLM1314-8F

X,Ku-BandInternallyMatchedFET