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零件编号	下载&订购	功能描述	制造商&上传企业
FGA30N120FTD	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGA30N120FTDTU	文件：614.76 Kbytes Page：9 Pages	1200V,30ATrenchIGBT	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGH30N120FTD	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGH30N120FTDTU	文件：588.2 Kbytes Page：9 Pages	Fieldstoptrenchtechnology GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features •Fi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FGW30N120H	文件：559.44 Kbytes Page：6 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
FGW30N120HD	文件：651.14 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)1200V/30A	FujiFUJI CORPORATION 株式会社ＦＵＪＩ
G30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
GW30N120KD	文件：359.23 Kbytes Page：13 Pages	30A-1200V-shortcircuitruggedIGBT	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
GWA30N120KD	文件：423.46 Kbytes Page：15 Pages	30A,1200VshortcircuitruggedIGBTwithUltrafastdiode Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH™p	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
HGTG30N120CN	文件：113.21 Kbytes Page：8 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
HGTG30N120CN	文件：40.5 Kbytes Page：5 Pages	30A,1200VN-ChannelIGBT Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HGTG30N120CN	文件：81.32 Kbytes Page：7 Pages	75A,1200V,NPTSeriesN-ChannelIGBT TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
HIH30N120TF	文件：892.05 Kbytes Page：8 Pages	1200VFieldStopTrenchIGBT	SEMIHOW SemiHow Co.,Ltd.
IHW30N120R	文件：201.5 Kbytes Page：10 Pages	HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IHW30N120R	文件：977.75 Kbytes Page：12 Pages	IGBTwithmonolithicbodydiodeforsoftswitchingApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IXDH30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Integrated Circuits Division
IXDH30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Integrated Circuits Division
IXDR30N120	文件：69.09 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage HighVoltageIGBTwithoptionalDiodeISOPLUS™package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features •NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -	IXYS IXYS Integrated Circuits Division
IXDT30N120	文件：94.32 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M	IXYS IXYS Integrated Circuits Division
IXDT30N120	文件：89.51 Kbytes Page：4 Pages	HighVoltageIGBTwithoptionalDiode	IXYS IXYS Integrated Circuits Division

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供应商	型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	TGAN30N120FD	TRINNO	2020	NA	1290	全新原装!优势库存热卖中!	询价
深圳市恒意法电子有限公司	TGAN30N120FD	TRINNO	21+	TO-3P	7200	专营原装正品现货,当天发货,可开发票!	询价
深圳市科思奇电子科技有限公司	TGAN30N120FD	TRINNO	2018+	TO-3PN	3600	全新原装正品现货	询价
深圳市安富世纪电子有限公司	TGAN30N120FD	TRINNO	21+	TO-3P	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	TGAN30N120FD	TRINNO	23+	TO-3P	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	TGAN30N120FD	TRINNO	2022	TO-3P	80000	原装现货,OEM渠道,欢迎咨询	询价
贸泽芯城（深圳）电子科技有限公司	TGAN30N120FD	TRINNO	21+		15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳市德创芯微科技有限公司	TGAN30N120FD	TRINNO	17+	TO-3P	741	全新原装,支持实单,假一罚十,德创芯微	询价
柒号芯城电子商务(深圳)有限公司	TGAN30N120FD	TRINNO	2023+	TO-3P	700000	柒号芯城跟原厂的距离只有0.07公分	询价
深圳市得捷芯城科技有限公司	TGAN30N120FD	TRINNO	23+	NA/	3530	原装现货,当天可交货,原型号开票	询价

更多TGAN30N120FD供应商更新时间2024-4-28 9:07:00

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