6 Watt Discrete Power GaN on SiC HEMT

文件：2.25847 Mbytes 页数：22 Pages

TriQuint

DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT

Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.\nThe device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency a • Frequency range: DC to 18 GHz\n • 38 dBm nominal Psat at 3 GHz\n • 71.6% maximum PAE\n • 18 dB nominal power gain at 3 GHz\n • Bias: Vd = 12 -32 V, Idq = 125 mA\n • Chip dimensions: 0.82 x 0.66 x 0.10 mm;

Qorvo

威讯联合

6 Watt Discrete Power GaN on SiC HEMT

文件：2.25847 Mbytes 页数：22 Pages

TriQuint

TRIQUENT
原厂封装

TRIQUENT

上传：深圳市朱博士电子科技有限公司

VISHAY/威世
原厂封装

VISHAY/威世

上传：深圳市恒佳微电子有限公司