TGF2023-2-01数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

特性 Features

• Frequency range: DC to 18 GHz

• 38 dBm nominal Psat at 3 GHz

• 71.6% maximum PAE

• 18 dB nominal power gain at 3 GHz

• Bias: Vd = 12 -32 V, Idq = 125 mA

• Chip dimensions: 0.82 x 0.66 x 0.10 mm

应用 Application

• Broadband Wireless
• Military
• Space