TGF2021-02数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGF2021-02 is a discrete 2 mm pHEMT which operates from DC to 12 GHz. The part is designed using Qorvo's proven standard 0.35um power pHEMT production process.
The TGF2021-02 typically provides greater than 33 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-02 appropriate for high efficiency applications. The TGF2021-02 is also ideally suited for point-to-point radio, high-reliability space and military applications.
The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

特性 Features

·Frequency range: DC to 12 GHz
·> 33 dBm nominal Psat
·59% maximum PAE
·11 dB nominal power gain
·Suitable for high reliability applications
·2 mm x 0.35 um Power pHEMT
·Nominal bias Vd = 8 to 12 V, Idq = 150 to 250 mA (under RF drive, Id rises from 150 mA to 480 mA)
·Chip dimensions: 0.57 x 0. 79 x 0.10 mm (0.022 x 0.031 x 0.004 in)

应用 Application

·Base Stations
·Broadband Wireless
·High Reliability Space
·Military
·Point-to-Point Radio