TGF2022-12数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC to 20 GHz. The part is designed using Qorvo's proven standard 0.35um power pHEMT production process.
The TGF2022-12 typically provides greater than 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for point-to-point radio, high-reliability space and military applications.
The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

特性 Features

·Frequency range: DC to 20 GHz
·> 31 dBm nominal Psat
·58% maximum PAE
·39 dBm nominal OIP3
·13 dB nominal power gain
·Suitable for high reliability applications
·1.2 mm x 0.35 um Power pHEMT
·Nominal bias Vd = 8 to 12 V, Idq = 90 to 150 mA (under RF drive, Id rises from 90 mA to 300 mA)
·Chip dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)

应用 Application

·Base Stations
·Broadband Wireless
·High Reliability Space
·Military
·Point-to-Point Radio