TGF2018

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die; • Frequency Range: DC - 20 GHz\n• 22 dBm Typical Output Power - P1dB\n• 14 dB Typical Gain @ 12 GHz\n• 55% PAE Typical @ 12 GHz\n• 1.0 dB Typical NF @12 GHz\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n;

Qorvo's TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.\nThe TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.\nLead-free and RoHS compliant.\n

TGF2018

180 um Discrete GaAs pHEMT

TGF2018_15

180 um Discrete GaAs pHEMT

TMM2018AP

16,384bitshighspeedandlowpowerstaticrandomaccessmemoryorganizedas2,048wordsby8bitsandoperatesfromasingle5Vsupply

VS2018AL

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VSMP2018

UltraHighPrecisionFoilWraparoundSurfaceMountChipResistorwithTCRof±0.05ppm/°CandPowerCoefficientof5ppmatRatedPowerandLoadLifeStabilityof±0.005(50ppm)