180 um Discrete GaAs pHEMT

文件：245.3 Kbytes 页数：8 Pages

TRIQUINT

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die

Qorvo's TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.\ • Frequency Range: DC - 20 GHz\n• 22 dBm Typical Output Power - P1dB\n• 14 dB Typical Gain @ 12 GHz\n• 55% PAE Typical @ 12 GHz\n• 1.0 dB Typical NF @12 GHz\n• No Vias\n• Technology: 0.25 um GaAs pHEMT;

Qorvo

威讯联合

180 um Discrete GaAs pHEMT

文件：245.3 Kbytes 页数：8 Pages

TRIQUINT

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

文件：338.2 Kbytes 页数：6 Pages

TOSHIBA

东芝

60V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：543.59 Kbytes 页数：6 Pages

ZETEX

60V, SOT23, NPN medium power transistor

文件：513.65 Kbytes 页数：6 Pages

DIODES

美台半导体