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SVD201

X Band VCO, PLO

X Band VCO, PLO Features • High Q. • High capacitance ratio.

文件:71.05 Kbytes 页数:2 Pages

SANYO

三洋

SVD202

X Band VCO, PLO

X Band VCO, PLO Features • High Q. • High capacitance ratio.

文件:70.97 Kbytes 页数:2 Pages

SANYO

三洋

SVD2955T4G

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件:913.4 Kbytes 页数:4 Pages

BYCHIP

百域芯

SVD2N60T

2A, 600V NChannel MOSFET

GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin™ structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to mini

文件:385.77 Kbytes 页数:6 Pages

SILAN

士兰微

SVD301

X Band VCO, PLO

X Band VCO, PLO Features • High Q. • High capacitance ratio.

文件:70.96 Kbytes 页数:2 Pages

SANYO

三洋

SVD302

X Band VCO, PLO

X Band VCO, PLO Features • High Q. • High capacitance ratio.

文件:71.09 Kbytes 页数:2 Pages

SANYO

三洋

SVD3205F

丝印:SVD3205F;Package:TO-220F-3L;110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件:248.07 Kbytes 页数:8 Pages

SILAN

士兰微

SVD3205S

丝印:SVD3205S;Package:TO-263-2L;110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件:248.07 Kbytes 页数:8 Pages

SILAN

士兰微

SVD3205STR

丝印:SVD3205S;Package:TO-263-2L;110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件:248.07 Kbytes 页数:8 Pages

SILAN

士兰微

SVD3205T

丝印:SVD3205T;Package:TO-220-3L;110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件:248.07 Kbytes 页数:8 Pages

SILAN

士兰微

技术参数

  • Polarity:

    N+P

  • Vdss (V):

    55

  • Id (A)Tc=25℃:

    17

  • Vgs (th) (V):

    2.0~4.0

  • Rds(on) @10V typ (mΩ):

    45.00

  • Rds (on) @10Vmax (mΩ):

    70.00

  • Qg@10Vtyp (nC):

    11.00

供应商型号品牌批号封装库存备注价格
SILAN
12+
TO-220
5000
原装现货价格有优势量多可发货
询价
士兰微
23+
TO-220F
3000
全新原装的现货
询价
士兰微
TO-220
3200
原装长期供货!
询价
SANYO
23+
SMD
5000
原装正品,假一罚十
询价
LS
17+
TO220
6200
100%原装正品现货
询价
SILAN
2016+
TO-251
4800
只做原装,假一罚十,公司可开17%增值税发票!
询价
士兰微
24+
TO-220F
5000
只做原装公司现货
询价
Silan
1706+
TO251
9100
只做原装进口,假一罚十
询价
士兰微
25+23+
TO-220
42022
绝对原装正品全新进口深圳现货
询价
SL
25+
TO-251-3L
90000
一级代理商进口原装现货、假一罚十价格合理
询价
更多SVD供应商 更新时间2026-1-22 14:10:00