Slide Potentiometer, 100K life cycle, high precision

Features 45, 60, 100mm long travel Rail design for smooth slide feel Dual output 100K long-life cycles Custom options available Applications Panel control that requires analog signal change via sliding. Popular for high-end audio mixer or video editing.

文件：669.64 Kbytes 页数：2 Pages

APEX-ELECTRONICS

丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

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丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

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丝印：SVD13N50F；Package：TO-220F-3L；13A, 500V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-

文件：533.62 Kbytes 页数：8 Pages

SILAN

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丝印：SVD13N50T；Package：TO-220-3L；13A, 500V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-

文件：533.62 Kbytes 页数：8 Pages

SILAN

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丝印：SVD3205F；Package：TO-220F-3L；110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

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丝印：SVD3205S；Package：TO-263-2L；110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

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丝印：SVD3205S；Package：TO-263-2L；110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

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丝印：SVD3205T；Package：TO-220-3L；110A, 55V N-CHANNEL MOSFET

DESCRIPTION SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide sup

文件：248.07 Kbytes 页数：8 Pages

SILAN

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丝印：SVD540D；Package：TO-252-2L；33A, 100V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD540T/D/K/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：372.58 Kbytes 页数：8 Pages

SILAN

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