| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：SVD540F；Package：TO-220F-3L；33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD540T/D/K/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：372.58 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD540K；Package：TO-262-3L；33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD540T/D/K/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：372.58 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD540T；Package：TO-220-3L；33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD540T/D/K/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res 文件：372.58 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640D；Package：TO-252-2L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore 文件：406.39 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640D；Package：TO-252-2L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore 文件：406.39 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640F；Package：TO-220F-3L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore 文件：406.39 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640S；Package：TO-263-2L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide super 文件：368.31 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640S；Package：TO-263-2L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide super 文件：368.31 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD640T；Package：TO-220-3L；18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore 文件：406.39 Kbytes 页数：8 Pages | SILAN 士兰微 | SILAN | ||
丝印：SVD7N65AF；Package：TO-220F-3L；7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-sta 文件：1.50561 Mbytes 页数：7 Pages | SILAN 士兰微 | SILAN |
技术参数
- Polarity：
N+P
- Vdss (V)：
55
- Id (A)Tc=25℃：
17
- Vgs (th) (V)：
2.0~4.0
- Rds(on) @10V typ (mΩ)：
45.00
- Rds (on) @10Vmax (mΩ)：
70.00
- Qg@10Vtyp (nC)：
11.00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN |
12+ |
TO-220 |
5000 |
原装现货价格有优势量多可发货 |
询价 | ||
士兰微 |
23+ |
TO-220F |
3000 |
全新原装的现货 |
询价 | ||
士兰微 |
TO-220 |
3200 |
原装长期供货! |
询价 | |||
SANYO |
23+ |
SMD |
5000 |
原装正品,假一罚十 |
询价 | ||
LS |
17+ |
TO220 |
6200 |
100%原装正品现货 |
询价 | ||
SILAN |
2016+ |
TO-251 |
4800 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
士兰微 |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
Silan |
1706+ |
TO251 |
9100 |
只做原装进口,假一罚十 |
询价 | ||
TRW |
新 |
1 |
全新原装 货期两周 |
询价 | |||
士兰微 |
25+23+ |
TO-220 |
42022 |
绝对原装正品全新进口深圳现货 |
询价 |
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