SVD13N50T中文资料士兰微数据手册PDF规格书

GENERAL DESCRIPTION

SVD13N50T/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-RinTM structure DMOS technology. The improved planar stripe

cell and the improved guarding ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

∗ 13A,500V,RDS(on)(typ)=0.36Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability